NCP5181DR2G datasheet

Маркировка

NCP5181DR2G
Производитель

ON Semiconductor
Описание

ON Semiconductor NCP5181DR2G Bridge Type: Full Bridge, Half Bridge Configuration: Half Bridge Current - Peak: 1.4A Delay Time: 100ns Fall Time: 40 ns High Side Voltage - Max (bootstrap): 600V Input Type: Non-Inverting Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 178 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Configurations: 1 Number Of Drivers: 2 Number Of Outputs: 2 Operating Temperature: -40?°C ~ 125?°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Rise Time: 60 ns Series: - Supply Current: 6.5 mA Supply Voltage (min): 10 V Type: High Side/Low Side Voltage - Supply: 10 V ~ 20 V Product Category: Power Driver ICs RoHS: yes Number of Drivers: 2 Supply Voltage - Min: 10 V Number of Outputs: 2 Factory Pack Quantity: 2500 Other Names: NCP5181DR2G, NCP5181DR2GOSTR
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12 шт.
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